LH1550AT1/ aab1/ aab1tr document number 83841 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 1 4 65 s' s nc 123 ss' i179003 dip smd pb p b -free e3 1 form a high-voltage solid state relay features ? current limit protection isolation test voltage 5300 v rms typical r on 28 ? load voltage 350 v load current 120 ma high surge capability clean bounce free switching low power consumption high reliability monolithic detector smd lead available on tape and reel lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection babt/bsi certified applications general telecom switching - on/off hook control - ring delay - dial pulse - ground start - ground fault protection instrumentation industrial controls description the lh1550 is robust, ideal for telecom and ground fault applications. it is a spst normally open switch (1 form a) that replaces electromechanical relays in many applications. it is similar to the lh1540, but has a characteristically higher on resistance. it is con- structed using a gaaias led for actuation control and an integrated monolithic die for the switch output. the die, fabricated in a high-voltage dielectrically iso- lated technology, is comprised of a photodiode array, switch control circuitry and mosfet switches. in addition, it employs current-limiting circuitry which meets fcc 68.302 and other regulatory voltage surge requirements when overvoltage protection is provided. order information part remarks LH1550AT1 thru hole, dip-6 lh1550aab1 smd-6 lh1550aab1tr tape and reel, smd-6
www.vishay.com 2 document number 83841 rev. 1.5, 26-oct-04 LH1550AT1/ aab1/ aab1tr vishay semiconductors absolute maximum ratings, t amb = 25 c stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum ratings for extended periods of time can adversely affect reliability. ssr 1) refer to current limit performance application note 58 fo r a discussion on relay operat ion during transient currents. electrical char acteristics, t amb = 25 c minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluations. typical values are for information only and are not part of the testing requirements. input output parameter test condition symbol value unit led continuous forward current i f 50 ma led reverse voltage i r 10 av r 8.0 v dc or peak ac load voltage i l 50 av l 350 v continuous dc load current - bidirectional operation i l 100 ma peak load current (single shot) t = 100 ms i p 1) ambient temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 150 c pin soldering temperature t = 10 s max t sld 260 c input/output isolation voltage v rms t = 1.0 s, i iso = 10 av iso 5300 v rms output power dissipation (continuous) p diss 550 mw parameter test condition symbol min ty p. max unit led forward current, switch turn-on i l = 100 ma, t = 10 ms i fon 1.1 2.0 ma led forward current, switch turn-off v l = 350 v i foff 0.001 1.0 - ma led forward voltage i f = 10 ma v f 1.15 1.25 1.45 v parameter test condition symbol min ty p. max unit on-resistance, ac: pin 4 () to 6 () i f = 5.0 ma, i l = 50 ma r on 28 50 ? off-resistance i f = 0 ma, v l = 100 v r off 0.5 300 - g ? current limit ac/dc i f = 5.0 ma, t = 5.0 ms, v l = 6.0 v i lmt 170 210 250 ma off-state leakage current i f = 0 ma, v l = 100 v i o 0.35 200 na i f = 0 ma, v l = 350 v i o 0.09 1.0 a output capacitance pin 4 to 6 i f = 0 ma, v l = 1.0 v c o 18 pf i f = 0 ma, v l = 50 v c o 7pf switch offset i f = 5.0 ma v os 0.3 v
LH1550AT1/ aab1/ aab1tr document number 83841 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 3 transfer typical characteris tics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit capacitance (input-output) v iso = 1.0 v c io 0.7 pf turn-on time i f = 5.0 ma, i l = 50 ma t on 1.1 3.0 ms turn-off time i f = 5.0 ma, i l = 50 ma t off 0.7 3.0 ms figure 1. recommended operating conditions figure 2. led voltage vs. temperature i1550at_00 80 60 40 20 C40 C20 0 20 40 60 80 ambient temperature (c) 0 100 =2.0ma load current (ma) i fon =3.0ma i fon i fon = 4.5 to 20 ma i1550at_01 ambient temperature, t a (c) led forwad voltage (v) C40 C20 1.6 1.5 1.4 1.3 1.2 1.1 1.0 i f =20ma i f =1ma i f =2ma i f =5ma i f =10ma i f =50ma 0 20 40 60 80 figure 3. current limit vs. temperature figure 4. turn-on time vs. temperature i1550at_02 40 30 20 10 0 C10 C20 C30 C40 change in current limit (%) normalized to 25c i f =5ma,t=5ms ambient temperature, t a (c) C40 C20 0 20 40 60 80 i1550at_03 ambient temperature, t a (c) C40 C20 0 20 40 60 80 70 60 50 40 30 20 10 0 C10 C20 C30 C40 change in turn-on time (%) normalized to 25c i f =5ma i f =50ma
www.vishay.com 4 document number 83841 rev. 1.5, 26-oct-04 LH1550AT1/ aab1/ aab1tr vishay semiconductors figure 5. led current for switch turn-on/off vs. temperature figure 6. on-resistanc e vs. temperature figure 7. turn-off time vs. temperature i1545at_04 300 200 100 0 C100 i f =50ma led forwad current for switch turn-0n/off (%) normalized to 25c ambient temperature, t a (c) C40 C20 0 20 40 60 80 i1550at_05 change in on-resistance (%) normalized to 25c 60 50 40 30 20 10 0 C10 C20 C30 C40 i l =5ma ambient temperature, t a (c) C40 C20 0 20 40 60 80 i1550at_06 80 75 50 25 0 C25 C50 change in turn-off time (%) normalized to 25c i f =5ma i l =50ma ambient temperature, t a (c) C40 C20 0 20 40 60 80
LH1550AT1/ aab1/ aab1tr document number 83841 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 5 package dimensions in inches (mm) package dimensions in inches (mm) .014 (.35) .010 (.25) .150 (3.81) .110 (2.79) .150 (3.81) .130 (3.30) .020 (.051) min. .300 (7.62) typ. .035 (0.90) .031 (0.80) .100 (2.54) typ. .039 (1.00) min. .022 (0.55) .018 (0.45) .256 (6.50) .248 (6.30) .343 (8.70) .335 (8.50) pin one id. 6 5 4 1 2 3 18 typ. .347 (8.82) .300 (7.62) 4 typ. dip isomethoda i178001 .343 (8.71) .335 (8.51) .256 (6.50) .248 (6.30) pin one i.d. .039 (0.99) min. .150 (3.81) .130 (3.30) .100 (2.54) .052 (1.33) .048 (1.22) 4 .040 (1.016) .020 (0.508) .0098 (.25) .0040 (.10) .012 (0.31) .008 (0.20) .300 (7.62) .395 (10.03) .375 (9.63) 3 to 7 18 min. .315 (8.00) typ. .050 (1.27) typ. smd iso method a i178002 .100 (2.54) r .010 (.25) .070 (1.78) .030 (.76) .060 (1.52) .315 (8.00) min .435 (11.05)
www.vishay.com 6 document number 83841 rev. 1.5, 26-oct-04 LH1550AT1/ aab1/ aab1tr vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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